Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-03-13
2010-12-28
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S089000, C257S103000, C257SE25028, C257SE33061, C313S502000, C313S503000
Reexamination Certificate
active
07858997
ABSTRACT:
A light emitting apparatus has a light emitting element with an emission wavelength in the range of 360 to 550 nm and a rare-earth element doped oxide nitride phosphor or cerium ion doped lanthanum silicon nitride phosphor. Part of light radiated from the light emitting element is wavelength-converted by the phosphor. The light emitting apparatus radiates white light generated by a mixture of the wavelength-converted light and the other part of light radiated from the light emitting element.
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Endo Tadashi
Komatsu Masakazu
Mitomo Mamoru
Ota Koichi
Suehiro Yoshinobu
Huynh Andy
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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