Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-06-28
2009-06-30
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S040000, C257S098000, C257S763000
Reexamination Certificate
active
07554128
ABSTRACT:
A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).
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Merriam-Webster's Collegia
Monoe Shigeharu
Okamoto Satoru
Yokoshima Takashi
Cook Alex Ltd.
Hu Shouxiang
Semiconductor Energy Laboratory Co,. Ltd.
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