Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-05-02
2006-05-02
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S089000, C257S100000
Reexamination Certificate
active
07038246
ABSTRACT:
A light emitting apparatus has: a light emitting element of nitride semiconductor; a phosphor that absorbs light emitted from the light emitting element and emits light with a wavelength different from that of the absorbed light; a first reflection mirror that reflects the light emitted from the light emitting element to converge the light; a second reflection mirror that has a light passing hole at a position on which the light reflected on the first reflection mirror is converged and that has a reflection surface on the side opposite to the side facing the first reflection mirror; and a phosphor layer that includes the phosphor, the phosphor layer being placed over the light passing hole and at a specific region in transparent resin that part of light passing through the light passing hole is radiated.
REFERENCES:
patent: 5698941 (1997-12-01), Jaskie et al.
patent: 6195196 (2001-02-01), Kimura et al.
patent: 6310364 (2001-10-01), Uemura
patent: 2001-217466 (2001-08-01), None
U.S. Appl. No. 10/393,024, filed Mar. 21, 2003, Specification and drawings.
McGinn IP Law Group PLLC
Nadav Ori
Toyoda Gosei Co,., Ltd.
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