Light-emitting apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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Details

C257S099000, C257S763000, C313S504000

Reexamination Certificate

active

06958490

ABSTRACT:
A light-emitting device, which has a structure that improves an opening ratio and light extraction efficiency, can solve a problem of an etching residue occurred during forming the device itself, and reduce deterioration due to poor coverage and short-circuiting to improve greatly the reliability, and a method for manufacturing the light-emitting device. In the light-emitting device having a structure that improves light extraction efficiency, a material used for forming a first electrode is Ti/TiN/Al (or Al—Ti)/Ti (or TiN).

REFERENCES:
patent: 6091195 (2000-07-01), Forrest et al.
patent: 6396208 (2002-05-01), Oda et al.
patent: 6597121 (2003-07-01), Imura
patent: 6608353 (2003-08-01), Miyazaki et al.
patent: 6692845 (2004-02-01), Maruyama et al.
patent: 6717181 (2004-04-01), Murakami et al.
patent: 6787796 (2004-09-01), Do et al.
patent: 2002/0063515 (2002-05-01), Goto
patent: 2002-015860 (2002-01-01), None
patent: 2002-132186 (2002-05-01), None
patent: 2002-208491 (2002-07-01), None

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