Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1996-05-29
1997-02-04
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 80, 257101, 257102, 257103, 257463, 257465, H01L 2715, H01L 31153, H01L 3112
Patent
active
056001576
ABSTRACT:
According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 .mu.m, for adequate sensitivity, and an impurity concentration of at least 5.times.10.sup.20 atoms/cm.sup.-3, for adequate emission. According to a second aspect of the invention, a light-emitting and light-sensing diode has a doped region with a deep part and a shallow part, and the area of the shallow part is increased to enhance the sensitivity of the diode. This may be done by providing the doped region with a meandering edge, or with one or more interior islands, or by forming the deep and shallow parts separately.
REFERENCES:
patent: 4037241 (1977-07-01), Dierschke
patent: 4424523 (1984-01-01), Snelling et al.
patent: 4424524 (1984-01-01), Daniels
patent: 5189496 (1993-02-01), Kuwabara
Abiko Ichimatsu
Chiba Mio
Furuya Hiroshi
Iguti Yasuo
Kaminishi Katsuzo
Guay John
OKI Electric Industry Co., Ltd.
Saadat Mahshid
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