Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-02-21
2006-02-21
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000
Reexamination Certificate
active
07001790
ABSTRACT:
A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer6has about a 1.0 μm thickness and a 2×1017/cm3hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
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Asai Makoto
Kato Hisaki
Koike Masayoshi
Manabe Katsuhide
Sassa Michinari
McGinn IP Law Group PLLC
Nguyen Thanh
Toyoda Gosei Co,., Ltd.
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