Light emission from rare-earth element-doped CaF.sub.2 thin film

Details Light emission from rare-earth element-doped CaF.sub.2 thin film Light emission from rare-earth element-doped CaF.sub.2 thin film

1992-09-30

1995-01-24

Scott, Jr., Leon

Coherent light generators

Thin film laser

372 69, 372 44, 372 39, 372 50, H01S 330

Patent

active

053847954

ABSTRACT:
By growing semi-insulating CaF.sub.2 films (272) on a silicon substrate (240), forming superlattice structures (260) made of CaF.sub.2 :Nd and other semiconductor layers (294) and by associating a co-dopant with Nd in the CaF.sub.2 films photoluminescence efficiency of CaF.sub.2 films is increased. This permits using electrons to produce photons and controlling optoelectronic devices using CaF.sub.2 films through voltage variation.

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