Light emission element using a polycrystalline semiconductor mat

Details Light emission element using a polycrystalline semiconductor mat Light emission element using a polycrystalline semiconductor mat

1992-04-22

1994-11-29

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 64, 257 72, 257 79, 257 91, 257 99, 372 43, H01L 3300, H01L 2904

Patent

active

053692900

ABSTRACT:
A light emission element using a plycrystalline semiconductor material of III-V group compound comprises an n type semiconductor polycrystalline layer and a p type semiconductor polycrystalline layer. In such a light emission element, the n type semiconductor polycrystalline layer and the p type semiconductor polycrystalline layer comprise a light emitting area formed by polycrystals having the average grain size of 0.6 .mu.m or more, and a wiring area formed by polycrystals having the average grain size of 0.5 .mu.m or less. Hence, the light emission efficiency is enhanced as well as improving the reliability of the element.

REFERENCES:
patent: 5010033 (1991-04-01), Tokunaga et al.
patent: 5036373 (1991-07-01), Yamazaki
J. P. Salerno et al., "Cathodoluminescence Analysis of Polycrystalline GaAs," RECIEEE, vol. 15, 1981, pp. 1174-1178.
O. Paz et al., "Collection of electron-beam-generated carriers in the presence of a grain boundary or an epitaxial interface," Journal of Applied Physics, vol. 61, No. 4, Feb. 15, 1987, pp. 1537-1546.
M. Yamaguchi et al., "Efficiency considerations for polycrystalline GaAs thin-film solar cells," Journal of Applied Physics, vol. 60, No. 1, Jul. 1, 1986, pp. 413-417.

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