Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-10-20
2011-10-11
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S100000, C257SE33061, C257SE33059, C257SE33074
Reexamination Certificate
active
08035122
ABSTRACT:
The present invention relates to light diffusion type light emitting diodes, more particularly, to a light emitting device having a large divergence angle by widely spreading an emitted light from a single color to a white color and a method thereof. The light emitting diode including the encapsulating layer according to the present invention is characterized by including at least two materials with different characteristics. According to the present invention, an encapsulating material for light emitting diode is mixed with at least two materials with a different polarity or a refractive index to easily form a light emitting diode. In addition, the light emitting diode die is bonded on the bottom surface of a cup, and an encapsulating material and microspheres are dispersed in the vicinity and upper portion of the light emitting diode and the entire light emitting diode, therefore the light emitting diode has a large and uniform divergence angle due to a light uniformly scattered and refracted. Furthermore, the microsphere particles with similar density to the encapsulating layer exist, thereby solving a problem of precipitation of particles, which occurs when the existing inorganic particles are dispersed.
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Kim Jae-Pil
Kim Tae-Hun
Lee Jae-Moon
Park Seung-Hyun
Yu Young-Moon
Chung Sungyeop
Korea Photonics Technology Institute
Meyer Jerald L.
The Nath Law Group
Tran Minh-Loan T
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