Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-08-06
1994-05-17
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257188, 257189, 257190, H01L 3104, H01L 29205
Patent
active
053130731
ABSTRACT:
An intersub-valence band quantum well detector (52), comprising alternating quantum wells (30') and barriers (32'), provided with differential strain permits obtaining hole mean free paths similar to the electron. Consequently, the gain and responsivity should dramatically increase. In addition, the absorption coefficient should increase, while the noise current should decrease; thus, the quantum efficiency and the detectivity (D*) should increase, compared to a detector without the added differential strain.
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Garmire Elsa M.
Kuroda Roger T.
Jackson Jerome
University of Southern California
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