Light detecting photodiode-MIS transistor device

Details Light detecting photodiode-MIS transistor device Light detecting photodiode-MIS transistor device

1980-03-26

1982-08-24

Edlow, Martin H.

357 23, 357 4, H01L 2714

Patent

active

043463959

ABSTRACT:
A light detector device comprises at least one pair made up of a light sensitive photodiode and a light signal reading MIS transistor switch. The pair is formed on an insulating substrate such as sapphire. The source region of the MIS transistor switch is contiguous with a photosensitive pn junction of the photodiode. The source, drain and channel regions of the MIS transistor switch reach the insulating substrate, thereby reducing the area of pn junction of the MIS transistor and hence the junction capacitance so that high signal output is available from the photodiode with high S/N ratio.

REFERENCES:
patent: 3515957 (1970-06-01), Kittagawa
patent: 3745072 (1973-07-01), Scott, Jr.
patent: 3974515 (1976-08-01), Ipri
patent: 4242695 (1980-12-01), Ouchi

Affiliated with

Also associated with

Rating

Light detecting photodiode-MIS transistor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light detecting photodiode-MIS transistor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light detecting photodiode-MIS transistor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1439006