Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1995-04-27
1997-12-30
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 23, 257 25, 257184, 257191, 257199, H01L 29205, H01L 31107, H01L 2726
Patent
active
057033790
ABSTRACT:
The present invention relates to a light-controlled semiconductor heterostructure component for generating microwave frequency oscillations, wherein the heterostructure comprises at least two semiconductor materials: at least one of them absorbing light by creating electron-hole pairs; and the other one of them having majority carriers with a relationship of velocity as a function of electric field that presents a region of negative slope.
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Le Person Henri
Minot Christophe
Palmier Jean-Fran.cedilla.ois
France Telecom
Jackson Jerome
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