Light-controlled semiconductor component having a field effect t

Details Light-controlled semiconductor component having a field effect t Light-controlled semiconductor component having a field effect t

1990-08-08

1991-08-13

James, Andrew J.

357 17, 357 19, 357 32, 357 35, 357 48, H01L 3110, H01L 2714

Patent

active

050400401

ABSTRACT:
A light-controllable semiconductor component includes a semiconductor body with an upper surface. A first zone of a first conductivity type is conterminous with the upper surface of the semiconductor body. A zone of a second conductivity type is embedded in the first zone and forms a gate zone of an enhancement FET. A zone of the first conductivity type is embedded in the gate zone of the enhancement FET and forms a source zone of the enhancement FET. A zone of the second conductivity type is embedded in the first zone and forms a light-sensitive region of a photosemiconductor component. The enhancement FET has a gate electrode electrically connected to the light-sensitive region. A further zone of the second conductivity type is embedded in the first zone. A depletion FET has a source zone, a drain zone and a gate zone embedded in the further zone. The depletion FET has a gate electrode electrically connected with the source zone of the depletion FET and with the source zone of the enhancement FET. The first zone forms a drain zone of the enhancement FET. A drain terminal is electrically connected to the drain zone of the enhancement FET and contacts the drain zone below the upper surface of the semiconductor body.

REFERENCES:
patent: 4815082 (1989-03-01), Ishiki et al.
patent: 4833511 (1989-05-01), Sugimoto
patent: 4847665 (1989-07-01), Mand
patent: 4879250 (1989-11-01), Chan
patent: 4888627 (1989-12-01), Pattanayak et al.
patent: 4902901 (1990-02-01), Pernyeszi
patent: 4916512 (1990-04-01), Ohmi et al.
Publication Electronics Letters-Article, vol. 22, No. 12, 6/5/1986, pp. 677 to 679, "Gigahertz Voltage-Controlled Ring Oscillator".

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