Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-01
2010-02-23
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S443000, C257S294000, C257SE31127, C257SE31130, C438S069000, C438S071000
Reexamination Certificate
active
07667286
ABSTRACT:
A high sensitive solid-state imaging apparatus which corresponds to an optical system has a short focal length (an optical system having a large incident angle θ). Each pixel (2.8 mm square in size) includes a distributed refractive index lens, a color filter for green, Al wirings, a signal transmitting unit, a planarized layer, a light-receiving element (Si photodiode), and an Si substrate. The concentric circle structure of the distributed index lens is made of four types of materials having different refractive indexes such as TiO2(n=2.53), SiN (n=2.53), SiO2(n=2.53), and air (n=1.0). In the concentric structure, a radial difference of outer peripheries of adjacent circular light-transmitting films is 100 nm. Furthermore, the film thickness is 0.4 νm.
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Partial English translations of JP 2001-108812 and JP 2005-084485 which were previously cited in the IDS filed Jan. 26, 2007.
Goubara Taku
Onozawa Kazutoshi
Toshikiyo Kimiaki
Ueda Daisuke
Ho Tu-Tu V
Panasonic Corporation
Wenderoth , Lind & Ponack, L.L.P.
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