Amplifiers – Parametric amplifiers – Semiconductor type
Patent
1986-10-02
1988-06-07
Moskowitz, Nelson
Amplifiers
Parametric amplifiers
Semiconductor type
357 17, 372 37, H01S 309, H01S 318, G02F 139
Patent
active
047499524
ABSTRACT:
An anomalous intensification of the infrared emission from n-InSb having a central wavelength almost equal to the energy gap has been observed, as a result of the cooperation of the magnetoconcentration effect and the photo-excitation, in the temperature range from 80.degree. to 300.degree. K. This suggests that a light amplifier which operates at room temperature can be realized through the process for photons with a wavelength corresponding to the energy gap of the semiconductor material forming the light amplifier concerned. Also the cooperation of the magneto-concentration with the photo-excitation has another useful application as a tunable light source controlled by varying the applied magnetic field through the interband Landau-level transitions at liquid helium temperatures.
REFERENCES:
patent: 3247765 (1966-04-01), Cocca et al.
patent: 4376307 (1983-03-01), Rozzi et al.
patent: 4450460 (1984-05-01), Morimoto
patent: 4516144 (1985-05-01), Jashalski et al.
Morimoto et al., "Infrared Emission . . . in InSb", 9/82, Proc. Int. Symp.; Abst. only supplied.
Morimoto et al., "Addendum on . . . Fields", 5/9/83, pp. 343-344, Phys. Lett. A, vol. 95A, #6;Abst. only.
Morimoto et al., "Infrared Emission . . . Fields", 10/12/81, Phys. Lett. A, vol. 85A, pp. 395-398; Abst. only.
Phelan et al., "Infrared InSb . . . Magnetic Fields", 11/1/63, pp. 143-145, APL, vol. 3, #9.
Gonda et al. "Possibility of . . . Magnetic Field", 1973, pp. 7-16, Bull. Electro. Lab., vol. 37, #7.
Birzhis et al., "Theory of . . . Magnetic Field", 7/74, Sov. J. Quant. Electron., vol. 4, #1.
Kyoto University
Moskowitz Nelson
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