Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2007-05-15
2007-05-15
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S099000, C257SE33046, C257SE33064, C257SE33066
Reexamination Certificate
active
10920010
ABSTRACT:
Device structures for sheets of light active material. A first substrate has a transparent first conductive layer. A pattern of light active semiconductor elements are fixed to the first substrate. The light active semiconductor elements have an n-side and a p-side. Each light active semiconductor element has either of the n-side or the p-side in electrical communication with the transparent conductive layer. A second substrate has a second conductive layer. An adhesive secures the second substrate to the first substrate so that the other of said n-side or said p-side of each said light active semiconductor element is in electrical communication with the second conductive layer. Thus forming a solid-state light active device.
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Daniels John James
Nelson Gregory Victor
Articulated Technologies, LLC.
Michaud-Duffy Group LLP
Ngo Ngan V.
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