Light activated silicon switch with etched channel in cathode ba

Details Light activated silicon switch with etched channel in cathode ba Light activated silicon switch with etched channel in cathode ba

1978-08-03

1981-11-17

Clawson, Jr., Joseph E.

357 38, 357 55, 350 9617, 350 9619, H01L 2714

Patent

active

043014623

ABSTRACT:
A light activated silicon switch (LASS) is disclosed in which light is transmitted from a light trigger source to target areas prepared in the cathode-base and anode-emitter regions of the silicon wafer. These target areas are V-shaped channels etched in the silicon wafer. Light transmitting conduits, each consisting of a central core of light transmissive material, with an outer cladding, are arranged to transmit the light energy to the respective target areas. The cladding is removed at one end of each conduit for optically coupling the light to the proximate target area, while the other end of the conduit is adapted to receive a light trigger signal of appropriate wave length.

REFERENCES:
patent: 3590344 (1971-06-01), Roberts et al.
patent: 3994559 (1976-11-01), Crow
patent: 4059338 (1977-11-01), Hartelius
patent: 4097118 (1978-06-01), Hammer
patent: 4110781 (1978-08-01), Konishi et al.
patent: 4128759 (1978-12-01), Hunt et al.
patent: 4135783 (1979-01-01), Kunze
patent: 4219833 (1980-08-01), Temple

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