Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2008-04-02
2010-10-26
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S115000, C257SE27127
Reexamination Certificate
active
07821016
ABSTRACT:
The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.
REFERENCES:
patent: 7605010 (2009-10-01), Krutsick
patent: 2009/0230476 (2009-09-01), Krutsick
Le Dung A.
Williams Morgan & Amerson
Zarlink Semiconductor (U.S.) Inc.
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