Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation
Reexamination Certificate
2006-06-06
2006-06-06
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
With light activation
C257S113000, C257S114000, C257S115000, C257S116000, C257S117000, C257S918000
Reexamination Certificate
active
07057214
ABSTRACT:
Semiconductor switches, such as thyristors, may be light activated by introducing the light into the switch via a groove having a sloped surface to receive the triggering light. The use of a sloped surface increases the surface path length between points of different electrical potential in the groove and, therefore, reduces the likelihood of electrical breakdown on the groove wall. In one particular embodiment, a light-activated thyristor includes a semiconductor anode layer, an n-base layer, a p-base layer and a semiconductor cathode layer disposed parallel to a thyristor plane. A thyristor axis lies perpendicular to the thyristor plane. A groove having a light refracting side wall extends into the thyristor from the anode layer. A portion of the light refracting side wall is disposed non-parallel to the thyristor plane and to the thyristor axis, and extends in the n-drift layer.
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Giorgi David M.
Navapanich Tajchai
Altera Law Group LLC
Optiswitch Technology Corporation
Soward Ida M.
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