Light-activated semiconductor-controlled rectifier

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357 20, 357 30, 357 39, 357 86, H01L 2974

Patent

active

039435504

ABSTRACT:
A light-activated semiconductor-controlled rectifier device comprising four layers of PNPN is disclosed in which a part of the edges of the PN junction formed between the intermediate P-type layer and the intermediate N-type layer is exposed on the same side on which the outer P-type layer is exposed, so that a photo-trigger signal is radiated on that exposed part of the edges of the PN junction.

REFERENCES:
patent: 3409810 (1968-11-01), Matzen
patent: 3422323 (1969-01-01), Whoriskey
patent: 3719863 (1973-03-01), Ogawa et al.
patent: 3818370 (1974-06-01), Abe et al.

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