Light absorption modulator and integrated semiconductor laser an

Details Light absorption modulator and integrated semiconductor laser an Light absorption modulator and integrated semiconductor laser an

1996-12-26

1998-06-23

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

359248, 372 26, 385 1, 385 2, H01S 319, H01S 310, G02F 103, G02F 101

Patent

active

057712573

ABSTRACT:
A light absorption modulator includes a semiconductor substrate of a first conductivity type; a first cladding layer of the first conductivity type disposed on the substrate; an optical waveguide disposed on the first cladding layer and including a multiple quantum well optical waveguide layer through which light travels and first and second light confinement layers respectively disposed on opposed surfaces of the optical waveguide layer to confine light in the optical waveguide layer; and a second cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the optical waveguide, one of the first and second cladding layers being n type, the one of the first and second light confinement layers that contacts the n type cladding layer being p type, and light traveling through the optical waveguide layer being modulated by applying an electric field to the optical waveguide layer. The electric field strength in the multiple quantum well optical waveguide layer when no reverse bias is applied to the modulator is reduced, whereby the rise time of the optical output from the modulator is reduced.

REFERENCES:
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patent: 5131060 (1992-07-01), Sakata
patent: 5436195 (1995-07-01), Kimura et al.
patent: 5519721 (1996-05-01), Takano
patent: 5528413 (1996-06-01), Ishimura
patent: 5572616 (1996-11-01), Aoki et al.
Devaux et al., "InGaAsP/InGaAsP Multiple-Quantum-Well Modulator With Improved Saturation Intensity And Bandwidth Over 20 GHz", IEEE Photonics Technology Letters, vol. 4, No. 7, 1992, pp. 720-723 (Jul. 1992).
Aoki et al., "InGaAs/InGaAsP MOW Electroabsorption Modulator Integrated With A DFB Laser Fabricated By Band-Gap Energy Control Selective Area MOCVD", IEEE Journal of Quantum Electronics, vol. 29, No. 6, 1993, pp. 2088-2096 (Jun. 1993).

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