LiGaO.sub.2 single crystal, single-crystal substrate, and method

Details LiGaO.sub.2 single crystal, single-crystal substrate, and method LiGaO.sub.2 single crystal, single-crystal substrate, and method

1999-04-22

2000-06-20

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

117 13, 4233281, C30B 1502

Patent

active

060773421

ABSTRACT:
An LiGaO.sub.2 single crystal manufactured by the Czochralski method has a crystallographic axis as a pulling direction set within an angle range of 30.degree. from a b- or a-axis direction. An LiGaO.sub.2 single-crystal substrate and a method of manufacturing the single crystal and the substrate are also disclosed.

REFERENCES:
patent: 3283164 (1966-11-01), Remeika
Kryliouk et al., "MOCVD Growth OG GaN Films on Lattice-Matched Oxide Substrates", Symposium III-V Nitrides, Materials Research Soc. Symp. Proc., 449(2), pp. 123-128, Dec. 6, 1996.

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