Lift-off wafer processing

Details Lift-off wafer processing Lift-off wafer processing

1982-08-02

1984-06-05

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 427 82, 427259, 528350, H01L 2128

Patent

active

044519710

ABSTRACT:
An improved lift-off process for forming metallized interconnections between various regions on a semi-conductor device relies on the use of a particular polyimide in forming a protective mask over the device. The polyimide is a copolymer of an aromatic cycloaliphatic diamine and a dianhydride which allows the resulting structure to withstand particularly high temperatures in the fabrication process. In particular, the polyamide when subjected to high temperature metallization under vacuum remains sufficiently soluble to be substantially completely removed from the device by immersion in common organic solvents. This allows high temperature metallization as interconnects for integrated circuits.

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patent: 4026876 (1977-05-01), Bateman et al.
patent: 4107174 (1978-08-01), Baumann et al.
patent: 4168999 (1979-09-01), Vora et al.
patent: 4238528 (1980-12-01), Angelo et al.
patent: 4371423 (1983-02-01), Yoshizawa et al.
IEEE Transactions on Electron Devices, vol. ED-28, No. 5, (May 1981), pp. 552-556, "Polyimide Liftoff Technology . . . LSI Metallization".
J. M. Frary and P. Seese, Dec. 1981, Semiconductor International, pp. 72-89, "Lift-Off Techniques for Fine Line Metal Patterning".

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