Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2004-05-06
2010-11-02
Vu, Hung (Department: 2811)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S026000
Reexamination Certificate
active
07825006
ABSTRACT:
One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.
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Communication regarding related European Application No. 05 728 975.3-1235, Dated: Oct. 21, 2009.
DenBaars Steven
Nakamura Shuji
Cree Inc.
Koppel, Patrick, Heybl & Dawson
Vu Hung
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