Lift-off process for fabricating self-aligned contacts

Details Lift-off process for fabricating self-aligned contacts Lift-off process for fabricating self-aligned contacts

1982-08-02

1984-04-03

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 427 99, B05D 512

Patent

active

044408048

ABSTRACT:
A process is provided for fabricating self-aligned contacts to the surface of an integrated circuit. The process includes the steps of depositing a layer of silicon dioxide 12 on the surface of a semiconductor structure 10; depositing a layer of polyimide 15 on the surface of the silicon dioxide 12; defining openings 23 in the polyimide material 15 and the silicon dioxide 12 to thereby expose regions of the semiconductor structure 10; and depositing metal 22 across the underlying surface and in the openings 23. In the preferred embodiment metal 22 is substantially the same thickness as silicon dioxide 12, and polyimide material 15 is masked using sequentially deposited layers of silicon dioxide 18 and photoresist 21.

REFERENCES:
patent: 3985597 (1976-10-01), Zielinski
patent: 4070501 (1978-01-01), Corbin et al.
patent: 4218283 (1980-08-01), Saiki et al.
patent: 4323638 (1982-04-01), Adams et al.
patent: 4378383 (1983-03-01), Moritz

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