Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2007-12-07
2010-10-12
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C414S415000, C438S050000, C361S233000
Reexamination Certificate
active
07812336
ABSTRACT:
At least one non-volatile device is coupled to a first Coulomb island. The floating gates of these non-volatile devices are connected to the island and can charge the Coulomb islands. One device can charge the island positively while a second device can be used to charge the island negatively. The Coulomb island can have a small probe opening where a charge can be introduced by using mechanical means such as an external probe or a MEMS switch. A fully charged capacitor formed in a first substrate can provide additional energy to a levitated substrate if the first substrate is connected to the levitated substrate. Bonding wires can be attached to a substrate that is attached to a mother substrate. Then, Coulomb forces can levitate the substrate from the mother substrate and the bonding wires can provide a source of power to the levitated substrate.
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Gabara Thaddeus
Metamems Corp.
Smith Bradley K
Valentine Jami M
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