Levenson phase shift mask and method for forming fine...

Details Levenson phase shift mask and method for forming fine... Levenson phase shift mask and method for forming fine...

2005-01-11

2005-01-11

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

06841318

ABSTRACT:
Levenson masks capable of minimizing the effect of optical proximity, and a method for forming a fine pattern using such Levenson masks wherein the Levenson masks have patterns where shielding regions are sandwiched between shifter regions and non-shifter regions respectively. The shifter regions and the non-shifter regions are formed to have predetermined shapes to minimize the effect of optical proximity. Specifically, aperture widths, which are defined as widths of the shifter regions and widths of the non-shifter regions perpendicular to the longitudinal directions of the linear shielding regions, are of a predetermined width for minimizing the effect of optical proximity. The Levenson masks have patterns different from each other and are used for multiple exposures.

REFERENCES:
patent: 6721938 (2004-04-01), Pierrat et al.
patent: 7-226362 (1995-08-01), None

Affiliated with

Also associated with

Rating

Levenson phase shift mask and method for forming fine... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Levenson phase shift mask and method for forming fine..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Levenson phase shift mask and method for forming fine... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3395790