Level shifting switch driver on GaAs pHEMT

Details Level shifting switch driver on GaAs pHEMT Level shifting switch driver on GaAs pHEMT

2011-01-04

2011-01-04

Wells, Kenneth B. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Diverging with single input and plural outputs

C327S427000, C327S436000, C327S437000

Reexamination Certificate

active

07863964

ABSTRACT:
A radio frequency semiconductor switching device (S) is formed on an MMIC structure (C) including a switching circuit element (12) having four semiconductor switching units (68, 70) with each adapted for receiving a gate control signal. A level shift circuit (10) generates a biasing voltage signal communicated of the switching units (68, 70) for biasing the switching units (68), and provides an output that swings between approximately one diode drop above ground and a negative voltage to bias the switching circuit elements (68and70) for reduced loss. The level shift circuit (10) is responsive to an externally provided control signal (58). The switching units (68, 70) are formed into a grouping of at least, a first and a second set (76, 78) of interconnected semiconductor switching units (68, 70) with each set (76, 78) having gates of at least two of the interconnected switching units (68, 70) connected with the level shift circuit output (60, 62). Both the switching units (68, 70) and the level shift circuit (10) are formed on the MMIC structure (C).

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