Level shifting circuit device

Communications: electrical – Digital comparator systems

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Details

3401725, 307238, G11C 1140, G11C 1300

Patent

active

039769844

ABSTRACT:
A level shifting circuit device comprises a first terminal connected to a high voltage power source, a P channel type IG-FET whose source and substrate electrodes are connected to said first terminal, means for applying a first pulse signal to the gate electrode of the P channel IG-FET, an N channel type IG-FET whose drain electrode is connected to the drain electrode of the P channel type IG-FET, an output terminal connected to a connecting point for connecting the drain electrodes of the P channel type and N channel type IG-FET's means for applying a specified voltage to the gate electrode of the N channel type IG-FET, an OR gate so connected as to supply an output to the source electrode of the N channel type IG-FET, means for supplying to the input terminals of the OR gate a second pulse signal synchronized with the first pulse signal and a low amplitude logic signal from the immediately preceding logic circuit to the level shifting circuit device, a capacitor connected between the substrate electrode of the N channel type IG-FET and the output terminal, and means for grounding the substrate electrode of the N channel type IG-FET, whereby only when the output from the OR gate has a 0 level as the low amplitude logic signal is shifted to a 0 level, a charge in the capacitor is discharged passing through the N channel IG-FET to cause the voltage level of the output terminal to become 0; and except for said time the capacitor is charged by the high amplitude power source to obtain high amplitude output 1 from the output terminal.

REFERENCES:
patent: 3852723 (1974-12-01), Wu

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