Level-shifting circuit and high-side driver including such a lev

Details Level-shifting circuit and high-side driver including such a lev Level-shifting circuit and high-side driver including such a lev

1996-04-09

1998-04-21

Cunningham, Terry

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

327108, 327333, 327380, 327389, 327390, 327427, 327434, H03K 17687

Patent

active

057421960

ABSTRACT:
A level-shifting circuit (LS.sub.A) including a series arrangement of a load resistor (R.sub.A), a main current path of an input transistor and a bipolar series transistor (T3.sub.A) arranged as a current source and having a parasitic transistor with a small current gain factor, which is obtained, for example, by wholly surrounding the comparatively weakly doped collector region with a comparatively heavily doped material of the same conductivity type as the collector region. When the input transistor (T1.sub.A) is not conductive a large amount of charge accumulates in the series transistor (T3.sub.A), which is then in saturation. When the input transistor (T1.sub.A) is turned on the accumulated charge causes an overshoot in the current (I.sub.A) through the level-shifter which overshoot compensates for the slow response as a result of the parasitic capacitance (PC.sub.A) at the node (N.sub.A).

REFERENCES:
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Schultz, PCIM--"Drive Techniques for High Side N-Channel MOSFETS", pp. 34-40, Jun. 1987.

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