Level shifting circuit

Details Level shifting circuit Level shifting circuit

2005-07-05

2005-07-05

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S108000, C326S081000

Reexamination Certificate

active

06914470

ABSTRACT:
The present invention provides a circuit to shift the level of an arbitrary input signal level higher than the power supply voltage to a reference logic level controlled by the power supply voltage quickly, reliably, and accurately. When a signal input to port A changes from the low level to the high level, the potential at node S1is immediately increased to a potential significantly higher than the power supply voltage due to the capacitive coupling of the drain-gate capacitance of NMOS transistor10, so that NMOS transistor14turns on at bias circuit12in order to allow current to flow from node S1to power supply voltage terminal C, and the potential of node S1is clamped to level (VCC+VTN14), that is, above power supply voltage VCCby threshold voltage VTN14. As a result, a high level equal to the level below gate potential (VCC+VTN14) by threshold voltage VTN10, that is, the potential of VCC, is obtained at source of NMOS transistor10, that is, port B.

REFERENCES:
patent: 4888501 (1989-12-01), Sanwo et al.
patent: 5680063 (1997-10-01), Ludwig et al.
patent: 5742183 (1998-04-01), Kuroda
patent: 6069515 (2000-05-01), Singh
patent: 6400189 (2002-06-01), McDaniel
patent: 2003/0132794 (2003-07-01), Watanabe

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