Active solid-state devices (e.g. – transistors – solid-state diode – Punchthrough structure device
Patent
1997-06-04
1999-07-27
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Punchthrough structure device
327 52, 327 56, 327320, 327333, 327562, 327563, 257273, 257272, 257280, 257566, 257551, H01L 29861, H03L 500
Patent
active
059295023
ABSTRACT:
A punch-through diode includes a first and second gate forming first and second junctions respectively with and spaced from each other by a first region. The junctions may be PN junction or Schottky barrier junctions with the first region. The diode may be the top gate-channel-bottom gate junctions of an FET or the collector-base-emitter junctions of a bipolar transistor. In either case, the channel or the base is depleted and currents flow between the top and bottom gate or the emitter and collector respectively. The punch-through diode is used as a voltage reference element and can be structured for Kelvin connection.
REFERENCES:
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patent: 3566213 (1971-02-01), Kaiser
patent: 3571630 (1971-03-01), Widlar
patent: 3758831 (1973-09-01), Clark
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patent: 4734752 (1988-03-01), Liu et al.
patent: 4948746 (1990-08-01), Beasom
A Fast, Accurate Comparator, Electronic Design, Sep. 13, 1980, p. 86.
Session VI: Circuit Techniques I, THAM 6.5: A New Low-Voltage Breakdown Diode, by R.J. Widlar, 1968 International Solid-State Circuits Conference pp. 66-67 dated Feb. 15, 1968.
Ahmad et al. Electronics Letters, May 13, 1976, 233-234, vol. 12, No. 10, "Schottky Baritt".
Guay John
Harris Corporation
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