Level shift interface circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307443, 307279, H03K 19017, H03K 19094, H03K 19092

Patent

active

045019789

ABSTRACT:
A voltage dropping element is connected in series with the conduction paths of first and second IGFETs, of complementary conductivity, between first and second terminals coupled to first (e.g. 5 volts) and second (e.g. 0 volt) voltage levels, respectively. The gates of the IGFETs are connected to an input terminal to which is applied TTL level signals (e.g. 0.4 to 2.4 volts) and their drains are connected to an output node. When the "high" TTL level (e.g. 2.4 volt) is present, the voltage dropping element reduces the effective gate-to-source voltage (V.sub.GS) of the first IGFET, reducing its conductivity, increasing its effective impedance substantially, and enabling the second IGFET to drive the output node to the second voltage level with little power dissipation. When the "low" TTL input (e.g. 0.4 volt) is present, the second IGFET is turned-off while the first IGFET is turned-on, driving the output node to the voltage at the first power terminal less the voltage drop of the voltage dropping element. A regenerative latch circuit connected to the output node senses the turn-on of the first IGFET and couples the output node to the voltage at the first power terminal eliminating the voltage offset at the output node due to the voltage dropping element.

REFERENCES:
patent: 3509379 (1970-04-01), Rapp
patent: 3675144 (1972-07-01), Zuk
patent: 4080539 (1978-03-01), Stewart
patent: 4216390 (1980-08-01), Stewart
patent: 4258272 (1981-03-01), Huang
patent: 4295065 (1981-10-01), Hsieh et al.
patent: 4365316 (1982-12-01), Iwahashi et al.
Dingwall, "TTL-to-CMOS Buffer Circuit"; RCA Technical Notes; TN No.: 1114; 3 pp.; 6/1975.

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