Level shift circuit capable of preventing occurrence of...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Amplitude control

Reexamination Certificate

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C326S063000, C326S081000

Reexamination Certificate

active

07746145

ABSTRACT:
A level shift circuit includes two high-voltage PMOS, two high-voltage NMOS, and two low-voltage NMOS transistors. The first high-voltage PMOS is connected between a high voltage and a second output terminal, having a gate connected to a first output terminal. The second high-voltage PMOS is connected between the high voltage and the first terminal, having a gate connected to the second terminal. The first high-voltage NMOS is connected to the second terminal, having a gate through which a second signal is input. The first low-voltage NMOS is connected between the first high-voltage N-channel MOS and a ground, having a gate through which the second signal is input. The second high-voltage NMOS is connected to the first terminal, having a gate through which a first signal is input. The second low-voltage NMOS is connected between the second N-channel MOS and the ground, having a gate through which the first signal is input.

REFERENCES:
patent: 6650168 (2003-11-01), Wang et al.
patent: 6700429 (2004-03-01), Kanno et al.
patent: 3070373 (2000-05-01), None

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