Level shift circuit and semiconductor device thereof

Details Level shift circuit and semiconductor device thereof Level shift circuit and semiconductor device thereof

2011-07-19

2011-07-19

Le, Dinh T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S538000, C326S062000, C326S081000

Reexamination Certificate

active

07982524

ABSTRACT:
A level shift circuit and a semiconductor device are configured to prevent failure and malfunction even when an excessive negative voltage or ESD surge are applied to a high-voltage power supply terminal. The level shift circuit includes a level shift resistor, a current-limiting resistor connected in series to the level shift resistor, and an n-channel MOSFET, with its drain connected to the current-limiting resistor. An output of the level-up circuit is obtained from the positioned between the level shift resistor and the current-limiting resistor. By providing the current-limiting resistor, the current that flows due to an excessive negative voltage or ESD surge is suppressed to prevent the level shift circuit from failing or malfunctioning.

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