Level realignment following an epitaxy step

Details Level realignment following an epitaxy step Level realignment following an epitaxy step

2005-04-20

2010-11-09

Rao, G. Nagesh (Department: 1792)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C117S084000, C117S089000, C117S090000, C117S094000, C117S095000, C117S097000, C117S101000, C117S105000, C257S758000, C257S765000

Reexamination Certificate

active

07830027

ABSTRACT:
The invention relates to inter-level realignment after a stage of epitaxy on a face (31) of a substrate (30), comprising the production of at least one initial guide mark (32) on the face of the substrate, this initial guide mark being designed so as to be transferred, during epitaxy, onto the surface of the epitaxied layer (36). The initial guide mark (32) is produced in such a way that, during epitaxy, its edges create growth defects that propagate as far as the surface of the epitaxied layer (36) to provide a transferred guide mark (37) on the surface of the epitaxied layer (36) reproducing the shape of the initial guide mark (32) and in alignment with the initial guide mark.

REFERENCES:
patent: 4936930 (1990-06-01), Gruber et al.
patent: 5128280 (1992-07-01), Matsumoto et al.
patent: 5270255 (1993-12-01), Wong
patent: 5283205 (1994-02-01), Sakamoto
patent: 5314837 (1994-05-01), Barber et al.
patent: 5405810 (1995-04-01), Mizuno et al.
patent: 5500392 (1996-03-01), Reynolds et al.
patent: 5700732 (1997-12-01), Jost et al.
patent: 5792122 (1998-08-01), Brimhall et al.
patent: 5798292 (1998-08-01), Jost et al.
patent: 5801090 (1998-09-01), Wu et al.
patent: 5925937 (1999-07-01), Jost et al.
patent: 6046094 (2000-04-01), Jost et al.
patent: 6137186 (2000-10-01), Jost et al.
patent: 6207529 (2001-03-01), Jost et al.
patent: 6358814 (2002-03-01), Harada
patent: 6596604 (2003-07-01), Lojek et al.
patent: 6605516 (2003-08-01), Jost et al.
patent: 7396407 (2008-07-01), Saenger et al.
patent: 2006/0099781 (2006-05-01), Beaumont et al.
patent: 2006/0208257 (2006-09-01), Branz et al.
patent: 2006/0255331 (2006-11-01), Chen et al.
patent: 2007/0221120 (2007-09-01), Diem et al.
patent: 0 961 320 (1999-12-01), None
patent: 63108717 (1988-05-01), None
patent: 07-153669 (1995-06-01), None
patent: 10312964 (1998-11-01), None
Ian Black “ASM Stepper Alignment Through Thick Expitaxial Silicon Films”, SPIE, vol. 3741, May 1999, pp. 23-33, XP-002319008.

Affiliated with

Also associated with

Rating

Level realignment following an epitaxy step does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Level realignment following an epitaxy step, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Level realignment following an epitaxy step will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4168259