Level conversion for use in semiconductor device

Details Level conversion for use in semiconductor device Level conversion for use in semiconductor device

2006-08-08

2006-08-08

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C326S081000

Reexamination Certificate

active

07088167

ABSTRACT:
In an operation to supply an input signal IN having an amplitude equal to a first power-supply voltage VDD1to the gate of a PMOS transistor PM51operating at a second power-supply voltage VDD2higher than the first power-supply voltage VDD1, the levels of signals are converted by using PMOS transistors PM1to PM4. A signal obtained as a result of the conversion is output from the PMOS transistors PM1and PM2, being used for controlling electrical conduction of a PMOS transistor PM51.

REFERENCES:
patent: 4713600 (1987-12-01), Tsugaru et al.
patent: 4920284 (1990-04-01), Denda
patent: 5808480 (1998-09-01), Morris
patent: 6806757 (2004-10-01), Mukai
patent: 6833747 (2004-12-01), Correale, Jr.
patent: 6861873 (2005-03-01), Correale, Jr.
patent: 6919737 (2005-07-01), Alvandpour et al.
patent: 2005/0190612 (2005-09-01), Kanno et al.
patent: 63-099615 (1988-04-01), None

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