Length measurement pattern, semiconductor device, and method...

Details Length measurement pattern, semiconductor device, and method... Length measurement pattern, semiconductor device, and method...

2006-02-17

2008-09-02

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S310000, C250S311000, C250S492200, C716S030000, C430S005000

Reexamination Certificate

active

07420190

ABSTRACT:
A length measurement pattern is used for forming a contact and a via on a diffusion layer and on a lower layer interconnect, respectively, with a photoresist. The length measurement pattern includes a first pattern16serving as an object of length measurement in length measurement SEM and a second pattern17disposed to be spaced apart from the first pattern16and used for positioning and focusing of the length measurement SEM.

REFERENCES:
patent: 7275227 (2007-09-01), Ying
patent: 2008/0003510 (2008-01-01), Harazaki
patent: 2003-197503 (2003-07-01), None

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