Led with alternated strain layer

Details Led with alternated strain layer Led with alternated strain layer

1999-12-02

2002-07-09

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000

Reexamination Certificate

active

06417522

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to light-emitting diodes (LEDs).
SUMMARY OF THE INVENTION
The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate; a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (Al
x
Ga
1-x
)
1-y
In
y
P/(Al
a
Ga
1-a
)
1-h
In
h
P, wherein 0.5≦x≦1; 0.4≦y≦0.6/0≦a≦0.4; 0≦b≦0.4.


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patent: 5559818 (1996-09-01), Shono et al.
patent: 5600667 (1997-02-01), Kidoguchi et al.
patent: 5784399 (1998-07-01), Sun
patent: 6057563 (2000-05-01), Chen et al.
patent: 0 518 320 (1992-12-01), None
patent: 0 557 638 (1993-09-01), None
Copy of Search Report dated Mar. 17, 1999 for corresponding United Kingdom Application No. GB 9826516.8.

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