LED units fabrication method

Details LED units fabrication method LED units fabrication method

2010-05-11

2011-10-04

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C438S033000, C438S479000

Reexamination Certificate

active

08030102

ABSTRACT:
A method for fabricating a plurality of individual light emitting diode units includes forming a GaN epitaxial layer on a sapphire substrate, forming a plurality of exhaust trenches on the GaN epitaxial layer, wherein the exhaust trenches define a plurality of individual light emitting diode units, forming a reflective layer on the GaN epitaxial layer, attaching the reflective layer to a conductive substrate, removing the sapphire substrate from the GaN epitaxial layer via a laser lift-off process, wherein a gas produced during the laser lift-off process is exhausted via the exhaust trenches, and dicing the conductive substrate along the exhaust trenches to form the plurality of individual light emitting diode units.

REFERENCES:
patent: 6163557 (2000-12-01), Dunnrowicz et al.
patent: 6746889 (2004-06-01), Eliashevich et al.
patent: 6818532 (2004-11-01), Yeom et al.
patent: 6878563 (2005-04-01), Bader et al.
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2003/0189212 (2003-10-01), Yoo
patent: 2009/0294784 (2009-12-01), Nakahara et al.

Affiliated with

Also associated with

Rating

LED units fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with LED units fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and LED units fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4301538