LED structure

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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Details

C438S013000, C438S200000, C438S347000, C257SE21053, C257SE21126, C257SE21127, C257SE21320, C257SE21561, C257SE21562

Reexamination Certificate

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07910395

ABSTRACT:
An LED structure includes a first substrate; an adhering layer formed on the first substrate; first ohmic contact layers formed on the adhering layer; epi-layers formed on the first ohmic contact layers; a first isolation layer covering the first ohmic contact layers and the epi-layers at exposed surfaces thereof; and first electrically conducting plates and second electrically conducting plates, both formed in the first isolation layer and electrically connected to the first ohmic contact layers and the epi-layers, respectively. The trenches allow the LED structure to facilitate complex serial/parallel connection so as to achieve easy and various applications of the LED structure in the form of single structures under a high-voltage environment.

REFERENCES:
patent: 5945689 (1999-08-01), Koike et al.
patent: 6853011 (2005-02-01), Lin
patent: 6998642 (2006-02-01), Lin et al.
patent: 2001/0045564 (2001-11-01), Koike et al.

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