LED semiconductor element having increased luminance

Details LED semiconductor element having increased luminance LED semiconductor element having increased luminance

2011-08-23

2011-08-23

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S088000, C257S099000, C257SE33001, C257SE33012

Reexamination Certificate

active

08003974

ABSTRACT:
An LED semiconductor element having at least one first radiation-generating active layer and at least one second radiation-generating active layer which is stacked above the first active layer in a vertical direction and is connected in series with the first active layer. The first active layer and the second active layer are electrically conductively connected by a contact zone.

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