Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-21
2006-03-21
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S095000, C257S098000, C257S099000, C257S103000, C438S700000, C438S701000, C438S734000, C438S737000
Reexamination Certificate
active
07015516
ABSTRACT:
A light-emitting microelectronic package includes a light-emitting diode (110) having a first region (114) of a first conductivity type, a second region (116) of a second conductivity type, and a light-emitting p-n junction (118) between the first and second regions. The light-emitting diode defines a lower contact surface (120) and a mesa (122) projecting upwardly from the lower contact surface. The first region (114) of a first conductivity type is disposed in the mesa (122) and defines a top surface of the mesa, and the second region (116) of a second conductivity type defines the lower contact surface that substantially surrounds the mesa (122). The mesa includes at least one sidewall (130) extending between the top surface (124) of the mesa and the lower contact surface (120), the at least one sidewall (130) having a roughened surface for optimizing light extraction from the package.
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Eliashevich Ivan
Karlicek, Jr. Robert F.
Venugopalan Hari
Fay Sharpe Fagan Minnich & McKee LLP
GELcore LLC
Tran Mai-Huong
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