Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-03-29
2011-03-29
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S094000, C257S096000, C257SE33008
Reexamination Certificate
active
07915605
ABSTRACT:
LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.
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Cheng Chih-Ching
Tsai Tzong-Liang
Huga Optotech Inc.
Jianq Chyun IP Office
Nguyen Thinh T
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