LED-laser lift-off method

Details LED-laser lift-off method LED-laser lift-off method

2011-06-07

2011-06-07

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S033000, C438S042000, C438S460000, C438S464000, C257SE21211

Reexamination Certificate

active

07955951

ABSTRACT:
The present invention discloses an LED-laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

REFERENCES:
patent: 6617261 (2003-09-01), Wong et al.
patent: 7202141 (2007-04-01), Park et al.

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