Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated
Reexamination Certificate
2007-06-05
2007-06-05
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Encapsulated
C257S098000, C438S022000
Reexamination Certificate
active
11209906
ABSTRACT:
An LED lamp according to the present invention includes: a substrate10having a principal surface10a; at least one LED12, which is supported on the principal surface10aof the substrate10; a reflector16, which has an opening that defines a reflective surface14surrounding the side surface of the LED12and which is supported on the principal surface10aof the substrate10; and an encapsulating resin layer18, which covers the LED12and the reflector16together. When a portion of the encapsulating resin layer18that covers the side surfaces16wof the reflector16has a thickness Dw and another portion of the encapsulating resin layer18that covers the upper surface16hof the reflector16has a thickness Dh, the LED lamp has a Dh/Dw ratio of 1.2 to 1.8.
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Ogata Toshifumi
Ono Tomoaki
Takahashi Kiyoshi
Tanimoto Noriyasu
Akin Gump Strauss Hauer & Feld & LLP
Arora Ajay
Crane Sara
Matsushita Electric - Industrial Co., Ltd.
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