Led lamp including a plurality of led chips

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Encapsulated

Reexamination Certificate

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Details

C257S098000, C438S022000

Reexamination Certificate

active

11209906

ABSTRACT:
An LED lamp according to the present invention includes: a substrate10having a principal surface10a; at least one LED12, which is supported on the principal surface10aof the substrate10; a reflector16, which has an opening that defines a reflective surface14surrounding the side surface of the LED12and which is supported on the principal surface10aof the substrate10; and an encapsulating resin layer18, which covers the LED12and the reflector16together. When a portion of the encapsulating resin layer18that covers the side surfaces16wof the reflector16has a thickness Dw and another portion of the encapsulating resin layer18that covers the upper surface16hof the reflector16has a thickness Dh, the LED lamp has a Dh/Dw ratio of 1.2 to 1.8.

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IPACK2003-35335: Desmond Y.R. Chong, C.K. Wang, K.C. Fong and Pradeep Lall, “Finite Element Parametric Analysis on Fine-Pitch BGA (FBGA) Packages”, Proceedings of IPACK03, International Electronic Packaging Technical Conference and Exhibition, Jul. 2003.
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