Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-12-15
2010-10-12
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S079000, C257S095000, C257S098000, C257SE33005, C257SE33067, C257SE33072, C257SE33073
Reexamination Certificate
active
07812357
ABSTRACT:
A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.
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Cho Hyun Kyong
Choi Jae Wan
Jang Jun Ho
Kim Jong Wook
Na Jong Ho
Huynh Andy
LG Electronics Inc.
LG Innotek Co. Ltd.
McKenna Long & Aldridge LLP
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