Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-06-11
2009-06-02
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S015000, C257S016000, C257S017000, C257S018000, C257S019000, C257S020000, C257S021000, C257S022000, C257S023000, C257S024000, C257S025000, C257S088000, C257S089000, C257S090000, C257S095000, C257S098000, C257S103000
Reexamination Certificate
active
07541610
ABSTRACT:
A light source is provided including an LED component having an emitting surface, which may include: i) an LED capable of emitting light at a first wavelength; and ii) a re-emitting semiconductor construction which includes a second potential well not located within a pn junction having an emitting surface; or which may alternately include a first potential well located within a pn junction and a second potential well not located within a pn junction; and which additionally includes a converging optical element.
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3M Innovative Properties Company
Moshrefzadeh Robert S.
Soward Ida M
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