Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-01-04
2011-01-04
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S013000
Reexamination Certificate
active
07863634
ABSTRACT:
Briefly, the present disclosure provides a device comprising: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction which comprises a potential well not located within a pn junction; and c) a reflector positioned to reflect light emitted from the LED onto the re-emitting semiconductor construction. Alternately, the device comprises: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction capable of emitting light at a second wavelength which comprises at least one potential well not located within a pn junction; and c) a reflector which transmits light at said first wavelength and reflects at least a portion of light at said second wavelength. Alternately, the device comprises a semiconductor unit comprising a first potential well located within a pn junction which comprises a LED capable of emitting light at a first wavelength, and a second potential well not located within a pn junction which comprises a re-emitting semiconductor construction.
REFERENCES:
patent: 5540978 (1996-07-01), Schrenk
patent: 5851905 (1998-12-01), McIntosh et al.
patent: 5882774 (1999-03-01), Jonza et al.
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 6010751 (2000-01-01), Shaw et al.
patent: 6172810 (2001-01-01), Fleming et al.
patent: 6303404 (2001-10-01), Moon et al.
patent: 6337536 (2002-01-01), Matsubara et al.
patent: 6504171 (2003-01-01), Grillot et al.
patent: 6531230 (2003-03-01), Weber et al.
patent: 6734467 (2004-05-01), Schlereth et al.
patent: 6991695 (2006-01-01), Tait et al.
patent: 7045375 (2006-05-01), Wu et al.
patent: 7091653 (2006-08-01), Ouderkirk et al.
patent: 7091661 (2006-08-01), Ouderkirk et al.
patent: 7157839 (2007-01-01), Ouderkirk et al.
patent: 7210977 (2007-05-01), Ouderkirk et al.
patent: 7245072 (2007-07-01), Ouderkirk et al.
patent: 2002/0041148 (2002-04-01), Cho et al.
patent: 2002/0134989 (2002-09-01), Yao et al.
patent: 2002/0154406 (2002-10-01), Merrill et al.
patent: 2003/0006430 (2003-01-01), Shibata et al.
patent: 2004/0075102 (2004-04-01), Chen et al.
patent: 2004/0144987 (2004-07-01), Ouderkirk et al.
patent: 2004/0145289 (2004-07-01), Ouderkirk et al.
patent: 2004/0145312 (2004-07-01), Ouderkirk et al.
patent: 2004/0145895 (2004-07-01), Ouderkirk et al.
patent: 2006/0124917 (2006-06-01), Miller et al.
patent: 2006/0124918 (2006-06-01), Miller et al.
patent: 733919 (2003-09-01), None
patent: 2004-072047 (2004-03-01), None
patent: WO 97/01778 (1997-01-01), None
patent: WO 01/75490 (2001-10-01), None
patent: WO 2004/068552 (2004-08-01), None
U.S. Appl. No. 10/762,678, filed Jan. 20, 2004, titled Phosphor Based Light Sources Having Front Illumination.
Dalmasso et al.,Injection Dependence of the Electroluminescence Spectra of Re-emitting semiconductor construction Free GaN-Based White Light Emitting Diodes, phys. stat. sol. (a) 192, No. 1, 139-143 (2003).
Damilano et al.,Monolithic White Light Emitting Diodes Based on InGaN/GaN Multiple-Quantum Wells, Jpn. J. Appl. Phys. vol. 40 (2001) pp. L918-L920.
Herbert Kroemer,Quantum Mechanics for Engineering, Materials Science and Applied Physics(Prentice Hall, Englewood Cliffs, New Jersey, 1994) at pp. 54-63.
Luo et al.,Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters, App. Phys. Letters, vol. 77, No. 26, pp. 4259-4261 (2000).
Yamada et al.,Re-emitting semiconductor construction Free High-Luminous-Efficiency White Light-Emitting Diodes Composed of InGaN Multi-Quantum Well, Jpn. J. Appl. Phys. vol. 41 (2002) pp. L246-L248.
Zory, ed.,Quantum Well Lasers(Academic Press, San Diego, California, 1993) at pp. 72-79.
3M Innovative Properties Company
Storvick Kristofor L.
Vu Hung
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