Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-04-12
2011-04-12
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S088000, C257S090000, C257S091000, C257S098000, C257SE21499, C257SE33057, C257SE33066, C438S026000, C438S027000, C438S028000
Reexamination Certificate
active
07923745
ABSTRACT:
An LED chip package structure with high-efficiency light-emitting effect includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace respectively formed on the substrate body. The light-emitting unit has a plurality of LED chips arranged on the substrate body, and each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with the positive electrode trace and the negative electrode trace of the substrate unit. The package colloid unit has a plurality of package colloids respectively covered on the LED chips.
REFERENCES:
patent: 2008/0258169 (2008-10-01), Masuko
patent: 2009/0231833 (2009-09-01), Miki et al.
Chuang Jonnie
Wang Bily
Wu Wen-Kuei
Harvatek Corporation
Nguyen Dao H
Rosenberg , Klein & Lee
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